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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1495 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed APPLICATIONS *Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 1500 V 600 V 6 V 4 A 50 W 150 .cn mi e IC Collector Current-Continuous Collector Power Dissipation @ TC= 25 PC TJ Junction Temperature Tstg Storage Temperature Range -45~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1495 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= 600 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 1A 1.5 V ICBO Collector Cutoff Current hFE DC Current Gain w w. w .cn mi cse is IC= 1A; VCE= 5V 6 VCB= 600V; IE= 0 10 A isc Websitewww.iscsemi.cn 2 |
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